Spectroscopic Ellipsometry Studies of n-i-p Hydrogenated Amorphous Silicon Based Photovoltaic Devices

Optimization of thin film photovoltaics (PV) relies on characterizing the optoelectronic and structural properties of each layer and correlating these properties with device performance. Growth evolution diagrams have been used to guide production of materials with good optoelectronic properties in...

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Detalles Bibliográficos
Autores principales: Karki Gautam, Laxmi, Junda, Maxwell M., Haneef, Hamna F., Collins, Robert W., Podraza, Nikolas J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456701/
https://www.ncbi.nlm.nih.gov/pubmed/28773255
http://dx.doi.org/10.3390/ma9030128

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456701/
https://www.ncbi.nlm.nih.gov/pubmed/28773255
http://dx.doi.org/10.3390/ma9030128

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