Site-Control of InAs/GaAs Quantum Dots with Indium-Assisted Deoxidation

Site-controlled epitaxial growth of InAs quantum dots on GaAs substrates patterned with periodic nanohole arrays relies on the deterministic nucleation of dots into the holes. In the ideal situation, each hole should be occupied exactly by one single dot, with no nucleation onto planar areas. Howeve...

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Detalles Bibliográficos
Autores principales: Hussain, Sajid, Pozzato, Alessandro, Tormen, Massimo, Zannier, Valentina, Biasiol, Giorgio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456728/
https://www.ncbi.nlm.nih.gov/pubmed/28773333
http://dx.doi.org/10.3390/ma9030208

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456728/
https://www.ncbi.nlm.nih.gov/pubmed/28773333
http://dx.doi.org/10.3390/ma9030208

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