The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned S...

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Detalles Bibliográficos
Autores principales: Chang, Wen-Chung, Su, Sheng-Chien, Wu, Chia-Ching
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456864/
https://www.ncbi.nlm.nih.gov/pubmed/28773656
http://dx.doi.org/10.3390/ma9070534

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456864/
https://www.ncbi.nlm.nih.gov/pubmed/28773656
http://dx.doi.org/10.3390/ma9070534

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