The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode

Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned S...

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Detalles Bibliográficos
Autores principales: Chang, Wen-Chung, Su, Sheng-Chien, Wu, Chia-Ching
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456864/
https://www.ncbi.nlm.nih.gov/pubmed/28773656
http://dx.doi.org/10.3390/ma9070534
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author Chang, Wen-Chung
Su, Sheng-Chien
Wu, Chia-Ching
author_facet Chang, Wen-Chung
Su, Sheng-Chien
Wu, Chia-Ching
author_sort Chang, Wen-Chung
collection PubMed
description Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions.
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spelling pubmed-54568642017-07-28 The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode Chang, Wen-Chung Su, Sheng-Chien Wu, Chia-Ching Materials (Basel) Article Vertically aligned p-type silicon nanowire (SiNW) arrays were fabricated through metal-assisted chemical etching (MACE) of Si wafers. An indium tin oxide/indium zinc oxide/silicon nanowire (ITO/IZO/SiNW) heterojunction diode was formed by depositing ITO and IZO thin films on the vertically aligned SiNW arrays. The structural and electrical properties of the resulting ITO/IZO/SiNW heterojunction diode were characterized by field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and current−voltage (I−V) measurements. Nonlinear and rectifying I−V properties confirmed that a heterojunction diode was successfully formed in the ITO/IZO/SiNW structure. The diode had a well-defined rectifying behavior, with a rectification ratio of 550.7 at 3 V and a turn-on voltage of 2.53 V under dark conditions. MDPI 2016-06-30 /pmc/articles/PMC5456864/ /pubmed/28773656 http://dx.doi.org/10.3390/ma9070534 Text en © 2016 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Chang, Wen-Chung
Su, Sheng-Chien
Wu, Chia-Ching
The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
title The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
title_full The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
title_fullStr The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
title_full_unstemmed The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
title_short The Development of High-Density Vertical Silicon Nanowires and Their Application in a Heterojunction Diode
title_sort development of high-density vertical silicon nanowires and their application in a heterojunction diode
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5456864/
https://www.ncbi.nlm.nih.gov/pubmed/28773656
http://dx.doi.org/10.3390/ma9070534
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