Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering

In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film’s optoelectronic properties as well as the film’s electrical stability were investigated. The results showed that the film’s crystallinity degrad...

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Detalles Bibliográficos
Autores principales: Jen, Shien-Uang, Sun, Hui, Chiang, Hai-Pang, Chen, Sheng-Chi, Chen, Jian-Yu, Wang, Xin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457010/
https://www.ncbi.nlm.nih.gov/pubmed/28774108
http://dx.doi.org/10.3390/ma9120987

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457010/
https://www.ncbi.nlm.nih.gov/pubmed/28774108
http://dx.doi.org/10.3390/ma9120987

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