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Optoelectronic Properties and the Electrical Stability of Ga-Doped ZnO Thin Films Prepared via Radio Frequency Sputtering
In this work, Ga-doped ZnO (GZO) thin films were deposited via radio frequency sputtering at room temperature. The influence of the Ga content on the film’s optoelectronic properties as well as the film’s electrical stability were investigated. The results showed that the film’s crystallinity degrad...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457010/ https://www.ncbi.nlm.nih.gov/pubmed/28774108 http://dx.doi.org/10.3390/ma9120987 |