Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiN(x)) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefit...

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Detalles Bibliográficos
Autores principales: Meng, Xin, Byun, Young-Chul, Kim, Harrison S., Lee, Joy S., Lucero, Antonio T., Cheng, Lanxia, Kim, Jiyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457024/
https://www.ncbi.nlm.nih.gov/pubmed/28774125
http://dx.doi.org/10.3390/ma9121007

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457024/
https://www.ncbi.nlm.nih.gov/pubmed/28774125
http://dx.doi.org/10.3390/ma9121007

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