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Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks
With the continued miniaturization of devices in the semiconductor industry, atomic layer deposition (ALD) of silicon nitride thin films (SiN(x)) has attracted great interest due to the inherent benefits of this process compared to other silicon nitride thin film deposition techniques. These benefit...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457024/ https://www.ncbi.nlm.nih.gov/pubmed/28774125 http://dx.doi.org/10.3390/ma9121007 |