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Effect of Low Pressure on Surface Roughness and Morphological Defects of 4H-SiC Epitaxial Layers
In this work, 4H-SiC epilayers are performed on 4° off-axis substrates under low pressure condition by horizontal hot wall chemical vapor deposition (HWCVD) with a standard chemistry of silane-propane-hydrogen, which focuses on the effects of growth pressure on morphology, basal plane dislocations (...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2016
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457113/ https://www.ncbi.nlm.nih.gov/pubmed/28773864 http://dx.doi.org/10.3390/ma9090743 |