Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO(2) as a Gate Dielectric

This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO(2)) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal a...

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Detalles Bibliográficos
Autores principales: Lam, Kai-Yuen, Huang, Jung-Sheng, Zou, Yong-Jie, Lee, Kuan-Wei, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457203/
https://www.ncbi.nlm.nih.gov/pubmed/28773982
http://dx.doi.org/10.3390/ma9110861

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5457203/
https://www.ncbi.nlm.nih.gov/pubmed/28773982
http://dx.doi.org/10.3390/ma9110861

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