Electrical Properties and Interfacial Studies of Hf(x)Ti(1–x)O(2) High Permittivity Gate Insulators Deposited on Germanium Substrates

In this research, the hafnium titanate oxide thin films, Ti(x)Hf(1–x)O(2), with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium ox...

Descripción completa

Detalles Bibliográficos
Autores principales: Lu, Qifeng, Mu, Yifei, Roberts, Joseph W., Althobaiti, Mohammed, Dhanak, Vinod R., Wu, Jingjin, Zhao, Chun, Zhao, Ce Zhou, Zhang, Qian, Yang, Li, Mitrovic, Ivona Z., Taylor, Stephen, Chalker, Paul R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458814/
https://www.ncbi.nlm.nih.gov/pubmed/28793705
http://dx.doi.org/10.3390/ma8125454

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458814/
https://www.ncbi.nlm.nih.gov/pubmed/28793705
http://dx.doi.org/10.3390/ma8125454

Ejemplares similares