Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The ori...

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Detalles Bibliográficos
Autores principales: Hsu, Kai-Chiang, Hsiao, Wei-Hua, Lee, Ching-Ting, Chen, Yan-Ting, Liu, Day-Shan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458876/
https://www.ncbi.nlm.nih.gov/pubmed/28793675
http://dx.doi.org/10.3390/ma8115417

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458876/
https://www.ncbi.nlm.nih.gov/pubmed/28793675
http://dx.doi.org/10.3390/ma8115417

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