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Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The ori...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2015
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458876/ https://www.ncbi.nlm.nih.gov/pubmed/28793675 http://dx.doi.org/10.3390/ma8115417 |