Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si(0.57)Ge(0.43)/Si) through microwave annealing...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Hsien, Tsai, Yi-He, Hsu, Chung-Chun, Luo, Guang-Li, Lee, Yao-Jen, Chien, Chao-Hsin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2015
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458906/
https://www.ncbi.nlm.nih.gov/pubmed/28793654
http://dx.doi.org/10.3390/ma8115403

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458906/
https://www.ncbi.nlm.nih.gov/pubmed/28793654
http://dx.doi.org/10.3390/ma8115403

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