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Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel

In this paper, we demonstrated the shallow NiSiGe Schottky junction on the SiGe P-channel by using low-temperature microwave annealing. The NiSiGe/n-Si Schottky junction was formed for the Si-capped/SiGe multi-layer structure on an n-Si substrate (Si/Si(0.57)Ge(0.43)/Si) through microwave annealing...

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Detalles Bibliográficos
Autores principales:	Lin, Yu-Hsien, Tsai, Yi-He, Hsu, Chung-Chun, Luo, Guang-Li, Lee, Yao-Jen, Chien, Chao-Hsin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2015
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458906/ https://www.ncbi.nlm.nih.gov/pubmed/28793654 http://dx.doi.org/10.3390/ma8115403

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