Full-Field Strain Mapping at a Ge/Si Heterostructure Interface

The misfit dislocations and strain fields at a Ge/Si heterostructure interface were investigated experimentally using a combination of high-resolution transmission electron microscopy and quantitative electron micrograph analysis methods. The type of misfit dislocation at the interface was determine...

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Detalles Bibliográficos
Autores principales: Li, Jijun, Zhao, Chunwang, Xing, Yongming, Su, Shaojian, Cheng, Buwen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2013
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458948/
https://www.ncbi.nlm.nih.gov/pubmed/28809265
http://dx.doi.org/10.3390/ma6062130

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5458948/
https://www.ncbi.nlm.nih.gov/pubmed/28809265
http://dx.doi.org/10.3390/ma6062130

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