Self-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory

Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiN(x)/n(+) Si and Ni/SiN(x)/n(++) Si resistive-switching random access memory devices. The Ni/SiN(x)/n(++) Si device’s Si bottom electrode had a higher dopant concentration (As ion > 10(19)...

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Detalles Bibliográficos
Autores principales: Kim, Sungjun, Chang, Yao-Feng, Kim, Min-Hwi, Kim, Tae-Hyeon, Kim, Yoon, Park, Byung-Gook
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459000/
https://www.ncbi.nlm.nih.gov/pubmed/28772819
http://dx.doi.org/10.3390/ma10050459

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459000/
https://www.ncbi.nlm.nih.gov/pubmed/28772819
http://dx.doi.org/10.3390/ma10050459

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