Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for e...

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Detalles Bibliográficos
Autores principales: Zhang, Yiyu, Qian, Ling-Xuan, Wu, Zehan, Liu, Xingzhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459179/
https://www.ncbi.nlm.nih.gov/pubmed/28772529
http://dx.doi.org/10.3390/ma10020168

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459179/
https://www.ncbi.nlm.nih.gov/pubmed/28772529
http://dx.doi.org/10.3390/ma10020168

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