High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a t...

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Detalles Bibliográficos
Autores principales: Li, Jyun-Yi, Chang, Sheng-Po, Hsu, Ming-Hung, Chang, Shoou-Jinn
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459180/
https://www.ncbi.nlm.nih.gov/pubmed/28772487
http://dx.doi.org/10.3390/ma10020126

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459180/
https://www.ncbi.nlm.nih.gov/pubmed/28772487
http://dx.doi.org/10.3390/ma10020126

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