Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models...

Descripción completa

Detalles Bibliográficos
Autores principales: Lill, Patrick C., Dahlinger, Morris, Köhler, Jürgen R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459181/
https://www.ncbi.nlm.nih.gov/pubmed/28772548
http://dx.doi.org/10.3390/ma10020189

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459181/
https://www.ncbi.nlm.nih.gov/pubmed/28772548
http://dx.doi.org/10.3390/ma10020189

Ejemplares similares