Boron Partitioning Coefficient above Unity in Laser Crystallized Silicon

Boron pile-up at the maximum melt depth for laser melt annealing of implanted silicon has been reported in numerous papers. The present contribution examines the boron accumulation in a laser doping setting, without dopants initially incorporated in the silicon wafer. Our numerical simulation models laser-induced melting as well as dopant diffusion, and excellently reproduces the secondary ion mass spectroscopy-measured boron profiles. We determine a partitioning coefficient [Formula: see text] above unity with [Formula: see text] and thermally-activated diffusivity [Formula: see text] , with a value [Formula: see text] cm [Formula: see text] ·s [Formula: see text] of boron in liquid silicon. For similar laser parameters and process conditions, our model predicts the anticipated boron profile of a laser doping experiment.