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Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing
The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He(+) ions with 1 × 10(17) ions/cm(2) fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. A...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5459187/ https://www.ncbi.nlm.nih.gov/pubmed/28772459 http://dx.doi.org/10.3390/ma10020101 |