Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and ene...

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Detalles Bibliográficos
Autores principales: Zürch, Michael, Chang, Hung-Tzu, Kraus, Peter M., Cushing, Scott K., Borja, Lauren J., Gandman, Andrey, Kaplan, Christopher J., Oh, Myoung Hwan, Prell, James S., Prendergast, David, Pemmaraju, Chaitanya D., Neumark, Daniel M., Leone, Stephen R.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Crystallographic Association 2017
Materias:
Ultrafast Structural Dynamics—A Tribute to Ahmed H. Zewail
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5461173/
https://www.ncbi.nlm.nih.gov/pubmed/28653020
http://dx.doi.org/10.1063/1.4985056

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5461173/
https://www.ncbi.nlm.nih.gov/pubmed/28653020
http://dx.doi.org/10.1063/1.4985056

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