One dimensional transport in silicon nanowire junction-less field effect transistors

Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regi...

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Detalles Bibliográficos
Autores principales: Mirza, Muhammad M., Schupp, Felix J., Mol, Jan A., MacLaren, Donald A., Briggs, G. Andrew D., Paul, Douglas J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5462787/
https://www.ncbi.nlm.nih.gov/pubmed/28592820
http://dx.doi.org/10.1038/s41598-017-03138-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5462787/
https://www.ncbi.nlm.nih.gov/pubmed/28592820
http://dx.doi.org/10.1038/s41598-017-03138-5

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