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One dimensional transport in silicon nanowire junction-less field effect transistors
Junction-less nanowire transistors are being investigated to solve short channel effects in future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction-less transistors with metallic doping densities which demonstrate clear 1D electronic transport characteristics. The 1D regi...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5462787/ https://www.ncbi.nlm.nih.gov/pubmed/28592820 http://dx.doi.org/10.1038/s41598-017-03138-5 |