Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trila...

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Detalles Bibliográficos
Autores principales: Zhang, Wei, Kong, Ji-Zhou, Cao, Zheng-Yi, Li, Ai-Dong, Wang, Lai-Guo, Zhu, Lin, Li, Xin, Cao, Yan-Qiang, Wu, Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465003/
https://www.ncbi.nlm.nih.gov/pubmed/28599512
http://dx.doi.org/10.1186/s11671-017-2164-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465003/
https://www.ncbi.nlm.nih.gov/pubmed/28599512
http://dx.doi.org/10.1186/s11671-017-2164-z

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