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Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trila...

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Autores principales: Zhang, Wei, Kong, Ji-Zhou, Cao, Zheng-Yi, Li, Ai-Dong, Wang, Lai-Guo, Zhu, Lin, Li, Xin, Cao, Yan-Qiang, Wu, Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465003/
https://www.ncbi.nlm.nih.gov/pubmed/28599512
http://dx.doi.org/10.1186/s11671-017-2164-z
_version_ 1783242870263644160
author Zhang, Wei
Kong, Ji-Zhou
Cao, Zheng-Yi
Li, Ai-Dong
Wang, Lai-Guo
Zhu, Lin
Li, Xin
Cao, Yan-Qiang
Wu, Di
author_facet Zhang, Wei
Kong, Ji-Zhou
Cao, Zheng-Yi
Li, Ai-Dong
Wang, Lai-Guo
Zhu, Lin
Li, Xin
Cao, Yan-Qiang
Wu, Di
author_sort Zhang, Wei
collection PubMed
description The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO(2)/TiO(2)/HfO(2)/Pt and Pt/HfO(2)/TiO(2)/HfO(2)/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of −3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 10(2). The electrode-dependent electroforming polarity can be interpreted by considering electrodes’ chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO(2)/TiO(2)/HfO(2) on Pt- and TiN-coated Si. Moreover, for Pt/HfO(2)/TiO(2)/HfO(2)/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters.
format Online
Article
Text
id pubmed-5465003
institution National Center for Biotechnology Information
language English
publishDate 2017
publisher Springer US
record_format MEDLINE/PubMed
spelling pubmed-54650032017-06-26 Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition Zhang, Wei Kong, Ji-Zhou Cao, Zheng-Yi Li, Ai-Dong Wang, Lai-Guo Zhu, Lin Li, Xin Cao, Yan-Qiang Wu, Di Nanoscale Res Lett Nano Express The HfO(2)/TiO(2)/HfO(2) trilayer-structure resistive random access memory (RRAM) devices have been fabricated on Pt- and TiN-coated Si substrates with Pt top electrodes by atomic layer deposition (ALD). The effect of the bottom electrodes of Pt and TiN on the resistive switching properties of trilayer-structure units has been investigated. Both Pt/HfO(2)/TiO(2)/HfO(2)/Pt and Pt/HfO(2)/TiO(2)/HfO(2)/TiN exhibit typical bipolar resistive switching behavior. The dominant conduction mechanisms in low and high resistance states (LRS and HRS) of both memory cells are Ohmic behavior and space-charge-limited current, respectively. It is found that the bottom electrodes of Pt and TiN have great influence on the electroforming polarity preference, ratio of high and low resistance, and dispersion of the operating voltages of trilayer-structure memory cells. Compared to using symmetric Pt top/bottom electrodes, the RRAM cells using asymmetric Pt top/TiN bottom electrodes show smaller negative forming voltage of −3.7 V, relatively narrow distribution of the set/reset voltages and lower ratio of high and low resistances of 10(2). The electrode-dependent electroforming polarity can be interpreted by considering electrodes’ chemical activity with oxygen, the related reactions at anode, and the nonuniform distribution of oxygen vacancy concentration in trilayer-structure of HfO(2)/TiO(2)/HfO(2) on Pt- and TiN-coated Si. Moreover, for Pt/HfO(2)/TiO(2)/HfO(2)/TiN devices, the TiN electrode as oxygen reservoir plays an important role in reducing forming voltage and improving uniformity of resistive switching parameters. Springer US 2017-06-08 /pmc/articles/PMC5465003/ /pubmed/28599512 http://dx.doi.org/10.1186/s11671-017-2164-z Text en © The Author(s). 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Zhang, Wei
Kong, Ji-Zhou
Cao, Zheng-Yi
Li, Ai-Dong
Wang, Lai-Guo
Zhu, Lin
Li, Xin
Cao, Yan-Qiang
Wu, Di
Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
title Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
title_full Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
title_fullStr Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
title_full_unstemmed Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
title_short Bipolar Resistive Switching Characteristics of HfO(2)/TiO(2)/HfO(2) Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition
title_sort bipolar resistive switching characteristics of hfo(2)/tio(2)/hfo(2) trilayer-structure rram devices on pt and tin-coated substrates fabricated by atomic layer deposition
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465003/
https://www.ncbi.nlm.nih.gov/pubmed/28599512
http://dx.doi.org/10.1186/s11671-017-2164-z
work_keys_str_mv AT zhangwei bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT kongjizhou bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT caozhengyi bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT liaidong bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT wanglaiguo bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT zhulin bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT lixin bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT caoyanqiang bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition
AT wudi bipolarresistiveswitchingcharacteristicsofhfo2tio2hfo2trilayerstructurerramdevicesonptandtincoatedsubstratesfabricatedbyatomiclayerdeposition