Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n(+)/n(0)/n(+)-GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the d...

Descripción completa

Detalles Bibliográficos
Autores principales: Tsykaniuk, Bogdan I., Nikolenko, Andrii S., Strelchuk, Viktor V., Naseka, Viktor M., Mazur, Yuriy I., Ware, Morgan E., DeCuir, Eric A., Sadovyi, Bogdan, Weyher, Jan L., Jakiela, Rafal, Salamo, Gregory J., Belyaev, Alexander E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465006/
https://www.ncbi.nlm.nih.gov/pubmed/28599511
http://dx.doi.org/10.1186/s11671-017-2171-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5465006/
https://www.ncbi.nlm.nih.gov/pubmed/28599511
http://dx.doi.org/10.1186/s11671-017-2171-0

Ejemplares similares