Abrupt p-n junction using ionic gating at zero-bias in bilayer graphene

Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The presence of two Dirac peaks in the gating curve of the fabric...

Descripción completa

Detalles Bibliográficos
Autores principales: Grover, Sameer, Joshi, Anupama, Tulapurkar, Ashwin, Deshmukh, Mandar M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5469745/
https://www.ncbi.nlm.nih.gov/pubmed/28611452
http://dx.doi.org/10.1038/s41598-017-03264-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5469745/
https://www.ncbi.nlm.nih.gov/pubmed/28611452
http://dx.doi.org/10.1038/s41598-017-03264-0

Ejemplares similares