Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared enhancement-mode (E-mode) GaN HEMTs having wi...

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Detalles Bibliográficos
Autores principales: Chien, Cheng-Yen, Wu, Wen-Hsin, You, Yao-Hong, Lin, Jun-Huei, Lee, Chia-Yu, Hsu, Wen-Ching, Kuan, Chieh-Hsiung, Lin, Ray-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5474228/
https://www.ncbi.nlm.nih.gov/pubmed/28629208
http://dx.doi.org/10.1186/s11671-017-2189-3

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5474228/
https://www.ncbi.nlm.nih.gov/pubmed/28629208
http://dx.doi.org/10.1186/s11671-017-2189-3

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