IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels

We report on the IR sensitivity enhancement of back-illuminated CMOS Image Sensor (BI-CIS) with 2-dimensional diffractive inverted pyramid array structure (IPA) on crystalline silicon (c-Si) and deep trench isolation (DTI). FDTD simulations of semi-infinite thick c-Si having 2D IPAs on its surface w...

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Detalles Bibliográficos
Autores principales: Yokogawa, Sozo, Oshiyama, Itaru, Ikeda, Harumi, Ebiko, Yoshiki, Hirano, Tomoyuki, Saito, Suguru, Oinoue, Takashi, Hagimoto, Yoshiya, Iwamoto, Hayato
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5476616/
https://www.ncbi.nlm.nih.gov/pubmed/28630442
http://dx.doi.org/10.1038/s41598-017-04200-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5476616/
https://www.ncbi.nlm.nih.gov/pubmed/28630442
http://dx.doi.org/10.1038/s41598-017-04200-y

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