Quantum tunnelling and charge accumulation in organic ferroelectric memory diodes

Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory...

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Detalles Bibliográficos
Autores principales: Ghittorelli, Matteo, Lenz, Thomas, Sharifi Dehsari, Hamed, Zhao, Dong, Asadi, Kamal, Blom, Paul W. M., Kovács-Vajna, Zsolt M., de Leeuw, Dago M., Torricelli, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5477493/
https://www.ncbi.nlm.nih.gov/pubmed/28604664
http://dx.doi.org/10.1038/ncomms15841

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5477493/
https://www.ncbi.nlm.nih.gov/pubmed/28604664
http://dx.doi.org/10.1038/ncomms15841

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