Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications

This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying...

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Detalles Bibliográficos
Autores principales: Sung, Ho-Kun, Qiang, Tian, Yao, Zhao, Li, Yang, Wu, Qun, Lee, Hee-Kwan, Park, Bum-Doo, Lim, Woong-Sun, Park, Kyung-Ho, Wang, Cong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5478634/
https://www.ncbi.nlm.nih.gov/pubmed/28634385
http://dx.doi.org/10.1038/s41598-017-04389-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5478634/
https://www.ncbi.nlm.nih.gov/pubmed/28634385
http://dx.doi.org/10.1038/s41598-017-04389-y

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