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Vertical and bevel-structured SiC etching techniques incorporating different gas mixture plasmas for various microelectronic applications
This study presents a detailed fabrication method, together with validation, discussion, and analysis, for state-of-the-art silicon carbide (SiC) etching of vertical and bevelled structures by using inductively coupled plasma reactive ion etching (ICP-RIE) for microelectronic applications. Applying...
Autores principales: | Sung, Ho-Kun, Qiang, Tian, Yao, Zhao, Li, Yang, Wu, Qun, Lee, Hee-Kwan, Park, Bum-Doo, Lim, Woong-Sun, Park, Kyung-Ho, Wang, Cong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5478634/ https://www.ncbi.nlm.nih.gov/pubmed/28634385 http://dx.doi.org/10.1038/s41598-017-04389-y |
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