Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer

Nonvolatile ternary memory devices were fabricated using the composite of polystyrene (PS) and graphene oxide(GO) as active layers, which have an reliable intermediate state. The current-voltage (I-V) curves of the indium tin oxide (ITO)/PS+GO/Al device under the external applied voltages exhibited...

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Detalles Bibliográficos
Autores principales: Sun, Yanmei, Wen, Dianzhong, Bai, Xuduo, Lu, Junguo, Ai, Chunpeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5479854/
https://www.ncbi.nlm.nih.gov/pubmed/28638136
http://dx.doi.org/10.1038/s41598-017-04299-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5479854/
https://www.ncbi.nlm.nih.gov/pubmed/28638136
http://dx.doi.org/10.1038/s41598-017-04299-z

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