Multi-layered NiO(y)/NbO(x)/NiO(y) fast drift-free threshold switch with high I(on)/I(off) ratio for selector application

NbO(2) has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO(2) follows the field-induced nucleation by investigating the delay time dependency at various volt...

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Detalles Bibliográficos
Autores principales: Park, Jaehyuk, Hadamek, Tobias, Posadas, Agham B., Cha, Euijun, Demkov, Alexander A., Hwang, Hyunsang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481432/
https://www.ncbi.nlm.nih.gov/pubmed/28642471
http://dx.doi.org/10.1038/s41598-017-04529-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481432/
https://www.ncbi.nlm.nih.gov/pubmed/28642471
http://dx.doi.org/10.1038/s41598-017-04529-4

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