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Multi-layered NiO(y)/NbO(x)/NiO(y) fast drift-free threshold switch with high I(on)/I(off) ratio for selector application
NbO(2) has the potential for a variety of electronic applications due to its electrically induced insulator-to-metal transition (IMT) characteristic. In this study, we find that the IMT behavior of NbO(2) follows the field-induced nucleation by investigating the delay time dependency at various volt...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5481432/ https://www.ncbi.nlm.nih.gov/pubmed/28642471 http://dx.doi.org/10.1038/s41598-017-04529-4 |