Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically conductive an...

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Detalles Bibliográficos
Autores principales: Nakajima, Anri, Tabei, Tetsuo, Yasukawa, Tatsuya
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5487332/
https://www.ncbi.nlm.nih.gov/pubmed/28655933
http://dx.doi.org/10.1038/s41598-017-04451-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5487332/
https://www.ncbi.nlm.nih.gov/pubmed/28655933
http://dx.doi.org/10.1038/s41598-017-04451-9

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