Nondestructive imaging of atomically thin nanostructures buried in silicon

It is now possible to create atomically thin regions of dopant atoms in silicon patterned with lateral dimensions ranging from the atomic scale (angstroms) to micrometers. These structures are building blocks of quantum devices for physics research and they are likely also to serve as key components...

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Detalles Bibliográficos
Autores principales: Gramse, Georg, Kölker, Alexander, Lim, Tingbin, Stock, Taylor J. Z., Solanki, Hari, Schofield, Steven R., Brinciotti, Enrico, Aeppli, Gabriel, Kienberger, Ferry, Curson, Neil J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2017
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5489266/
https://www.ncbi.nlm.nih.gov/pubmed/28782006
http://dx.doi.org/10.1126/sciadv.1602586

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5489266/
https://www.ncbi.nlm.nih.gov/pubmed/28782006
http://dx.doi.org/10.1126/sciadv.1602586

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