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A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified as a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip metal loop aro...

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Detalles Bibliográficos
Autores principales: Chow, Hwang-Cherng, Chatterjee, Prasenjit, Feng, Wu-Shiung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5492810/
https://www.ncbi.nlm.nih.gov/pubmed/28538679
http://dx.doi.org/10.3390/s17061199