Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells

Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have se...

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Detalles Bibliográficos
Autores principales: Butkutė, Renata, Niaura, Gediminas, Pozingytė, Evelina, Čechavičius, Bronislovas, Selskis, Algirdas, Skapas, Martynas, Karpus, Vytautas, Krotkus, Arūnas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2017
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5493604/
https://www.ncbi.nlm.nih.gov/pubmed/28673054
http://dx.doi.org/10.1186/s11671-017-2205-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5493604/
https://www.ncbi.nlm.nih.gov/pubmed/28673054
http://dx.doi.org/10.1186/s11671-017-2205-7

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