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Bismuth Quantum Dots in Annealed GaAsBi/AlAs Quantum Wells
Formation of bismuth nanocrystals in GaAsBi layers grown by molecular beam epitaxy at 330 °C substrate temperature and post-growth annealed at 750 °C is reported. Superlattices containing alternating 10 nm-thick GaAsBi and AlAs layers were grown on semi-insulating GaAs substrate. AlAs layers have se...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5493604/ https://www.ncbi.nlm.nih.gov/pubmed/28673054 http://dx.doi.org/10.1186/s11671-017-2205-7 |