Investigation of multilevel data storage in silicon-based polycrystalline ferroelectric tunnel junction

Multilevel data ferroelectric tunnel junction is a breakthrough for further improving the storage density of ferroelectric random access memories. However, the application of these ferroelectric tunnel junctions is limited by high cost of epitaxial perovskite heterostructures, unsatisfactory retenti...

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Detalles Bibliográficos
Autores principales: Hou, Pengfei, Wang, Jinbin, Zhong, Xiangli
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://www.ncbi.nlm.nih.gov/pubmed/28674444
http://dx.doi.org/10.1038/s41598-017-04825-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495759/
https://www.ncbi.nlm.nih.gov/pubmed/28674444
http://dx.doi.org/10.1038/s41598-017-04825-z

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