Anisotropically biaxial strain in non-polar (112–0) plane In(x)Ga(1−x)N/GaN layers investigated by X-ray reciprocal space mapping

In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In(x)Ga(1−x)N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In(x)Ga(1−x)...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhao, Guijuan, Li, Huijie, Wang, Lianshan, Meng, Yulin, Ji, Zesheng, Li, Fangzheng, Wei, Hongyuan, Yang, Shaoyan, Wang, Zhanguo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495801/
https://www.ncbi.nlm.nih.gov/pubmed/28674408
http://dx.doi.org/10.1038/s41598-017-04854-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495801/
https://www.ncbi.nlm.nih.gov/pubmed/28674408
http://dx.doi.org/10.1038/s41598-017-04854-8

Ejemplares similares