Cargando…

Anisotropically biaxial strain in non-polar (112–0) plane In(x)Ga(1−x)N/GaN layers investigated by X-ray reciprocal space mapping

In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In(x)Ga(1−x)N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In(x)Ga(1−x)...

Descripción completa

Detalles Bibliográficos
Autores principales:	Zhao, Guijuan, Li, Huijie, Wang, Lianshan, Meng, Yulin, Ji, Zesheng, Li, Fangzheng, Wei, Hongyuan, Yang, Shaoyan, Wang, Zhanguo
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2017
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5495801/ https://www.ncbi.nlm.nih.gov/pubmed/28674408 http://dx.doi.org/10.1038/s41598-017-04854-8

Ejemplares similares

Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers
por: Zhao, Guijuan, et al.
Publicado: (2016)

Anisotropic Strain Relaxation in Semipolar [Formula: see text] InGaN/GaN Superlattice Relaxed Templates
por: Li, Wenlong, et al.
Publicado: (2022)

Optimization of Ternary In(x)Ga(1-x)N Quantum Wells on GaN Microdisks for Full-Color GaN Micro-LEDs
por: Lin, Yu-Chung, et al.
Publicado: (2023)

Mn as Surfactant for the Self-Assembling of Al(x)Ga(1–x)N/GaN Layered Heterostructures
por: Devillers, Thibaut, et al.
Publicado: (2015)

Multicolor Emission from Ultraviolet GaN-Based Photonic Quasicrystal Nanopyramid Structure with Semipolar In(x)Ga(1−x)N/GaN Multiple Quantum Wells
por: Chen, Cheng-Chang, et al.
Publicado: (2021)

Charge polarization effects and $ HOLE$ spectra characteristics in $Al_{x}Ga_{1-x}N/GaN$ superlattices
por: Assaoui, F, et al.
Publicado: (2001)

Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1−x)N Layers
por: Cai, Yuefei, et al.
Publicado: (2018)

All-nitride Al(x)Ga(1−x)N:Mn/GaN distributed Bragg reflectors for the near-infrared
por: Capuzzo, Giulia, et al.
Publicado: (2017)

Emission color-tuned light-emitting diode microarrays of nonpolar In(x)Ga(1–x)N/GaN multishell nanotube heterostructures
por: Hong, Young Joon, et al.
Publicado: (2015)

The immiscibility of InAlN ternary alloy
por: Zhao, Guijuan, et al.
Publicado: (2016)

Investigation on Surface Polarization of Al(2)O(3)-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy
por: Duan, Tian Li, et al.
Publicado: (2017)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy
por: Sang, Ling, et al.
Publicado: (2014)

X-ray Reciprocal Space Mapping of Graded Al(x)Ga(1 − x)N Films and Nanowires
por: Stanchu, Hryhorii V., et al.
Publicado: (2016)

Ground-State Structure of Quaternary Alloys (SiC)(1−x) (AlN)(x) and (SiC)(1−x) (GaN)(x)
por: Menad, Abdelkader, et al.
Publicado: (2023)

Nanoscale anisotropic plastic deformation in single crystal GaN
por: Huang, Jun, et al.
Publicado: (2012)

Anisotropic properties of pipe-GaN distributed Bragg reflectors
por: Wu, Chia-Jung, et al.
Publicado: (2020)

X-ray detection with zinc-blende (cubic) GaN Schottky diodes
por: Gohil, T., et al.
Publicado: (2016)

GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm
por: Thalhammer, Stefan, et al.
Publicado: (2022)

Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale
por: Wehbe, Maya, et al.
Publicado: (2023)

Impact of Charge-Trapping Effects on Reliability Instability in Al(x)Ga(1−x)N/GaN High-Electron-Mobility Transistors with Various Al Compositions
por: Amir, Walid, et al.
Publicado: (2023)

Self-formed compositional superlattices triggered by cation orderings in m-plane Al(1−x)In(x)N on GaN
por: Chichibu, Shigefusa F., et al.
Publicado: (2020)

First-Principle Study of the Optical Properties of Dilute-P GaN(1−x)P(x) Alloys
por: Borovac, Damir, et al.
Publicado: (2018)

Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy
por: Zhao, Yanfei, et al.
Publicado: (2019)

Lattice dynamics of Ga(1−x)Mn(x)N and Ga(1−x)Mn(x)As by first-principle calculations
por: Leite Alves, Horacio W, et al.
Publicado: (2012)

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer
por: Arteev, Dmitri S., et al.
Publicado: (2022)

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded Al(x)Ga(1−x)N Buffer Layer
por: Lee, Chang-Ju, et al.
Publicado: (2017)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

The Role of GaN in the Heterostructure WS(2)/GaN for SERS Applications
por: Ko, Tsung-Shine, et al.
Publicado: (2023)

Comprehensive Comparison of MOCVD- and LPCVD-SiN(x) Surface Passivation for AlGaN/GaN HEMTs for 5G RF Applications
por: Deng, Longge, et al.
Publicado: (2023)

Nitrogen-related intermediate band in P-rich GaN(x)P(y)As(1−x−y) alloys
por: Zelazna, K., et al.
Publicado: (2017)

Cathodoluminescence Spectroscopy in Graded In(x)Ga(1−x)N
por: Zhao, Xiaofang, et al.
Publicado: (2022)

The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs
por: Grabowski, Mikolaj, et al.
Publicado: (2021)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Elemental Distribution and Structural Characterization of GaN/InGaN Core-Shell Single Nanowires by Hard X-ray Synchrotron Nanoprobes
por: Secco, Eleonora, et al.
Publicado: (2019)

A semiconducting hybrid of RhO(x)/GaN@InGaN for simultaneous activation of methane and water toward syngas by photocatalysis
por: Li, Dongke, et al.
Publicado: (2023)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

GaAs(1−x)Bi(x)/GaN(y)As(1−y) type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics
por: Broderick, Christopher A., et al.
Publicado: (2017)

AlGaN/GaN FETs looms over GaAs technology
Publicado: (2003)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Cannot write session to /tmp/vufind_sessions/sess_s45lhd3eol6bqdq1jck7imis6r