Self-compensation in arsenic doping of CdTe

Efficient p-type doping in CdTe has remained a critical challenge for decades, limiting the performance of CdTe-based semiconductor devices. Arsenic is a promising p-type dopant; however, reproducible doping with high concentration is difficult and carrier lifetime is low. We systematically studied...

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Detalles Bibliográficos
Autores principales: Ablekim, Tursun, Swain, Santosh K., Yin, Wan-Jian, Zaunbrecher, Katherine, Burst, James, Barnes, Teresa M., Kuciauskas, Darius, Wei, Su-Huai, Lynn, Kelvin G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5496905/
https://www.ncbi.nlm.nih.gov/pubmed/28676701
http://dx.doi.org/10.1038/s41598-017-04719-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5496905/
https://www.ncbi.nlm.nih.gov/pubmed/28676701
http://dx.doi.org/10.1038/s41598-017-04719-0

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