Negative voltage modulated multi-level resistive switching by using a Cr/BaTiO(x)/TiN structure and quantum conductance through evidence of H(2)O(2) sensing mechanism

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO(x)/TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO(x) film has been confirmed by high-resolution tra...

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Detalles Bibliográficos
Autores principales: Chakrabarti, Somsubhra, Ginnaram, Sreekanth, Jana, Surajit, Wu, Zong-Yi, Singh, Kanishk, Roy, Anisha, Kumar, Pankaj, Maikap, Siddheswar, Qiu, Jian-Tai, Cheng, Hsin-Ming, Tsai, Ling-Na, Chang, Ya-Ling, Mahapatra, Rajat, Yang, Jer-Ren
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5498493/
https://www.ncbi.nlm.nih.gov/pubmed/28680111
http://dx.doi.org/10.1038/s41598-017-05059-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5498493/
https://www.ncbi.nlm.nih.gov/pubmed/28680111
http://dx.doi.org/10.1038/s41598-017-05059-9

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