Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy

Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detec...

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Detalles Bibliográficos
Autores principales: Hristu, Radu, Stanciu, Stefan G., Tranca, Denis E., Polychroniadis, Efstathios K., Stanciu, George A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2017
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5501800/
https://www.ncbi.nlm.nih.gov/pubmed/28687789
http://dx.doi.org/10.1038/s41598-017-05010-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5501800/
https://www.ncbi.nlm.nih.gov/pubmed/28687789
http://dx.doi.org/10.1038/s41598-017-05010-y

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