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Identification of stacking faults in silicon carbide by polarization-resolved second harmonic generation microscopy
Although silicon carbide is a highly promising crystalline material for a wide range of electronic devices, extended and point defects which perturb the lattice periodicity hold deep implications with respect to device reliability. There is thus a great need for developing new methods that can detec...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2017
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5501800/ https://www.ncbi.nlm.nih.gov/pubmed/28687789 http://dx.doi.org/10.1038/s41598-017-05010-y |