Study of Charge Carrier Transport in GaN Sensors

Capacitor and Schottky diode sensors were fabricated on GaN material grown by hydride vapor phase epitaxy and metal-organic chemical vapor deposition techniques using plasma etching and metal deposition. The operational characteristics of these devices have been investigated by profiling current tra...

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Detalles Bibliográficos
Autores principales: Gaubas, Eugenijus, Ceponis, Tomas, Kuokstis, Edmundas, Meskauskaite, Dovile, Pavlov, Jevgenij, Reklaitis, Ignas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5502986/
https://www.ncbi.nlm.nih.gov/pubmed/28773418
http://dx.doi.org/10.3390/ma9040293

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC5502986/
https://www.ncbi.nlm.nih.gov/pubmed/28773418
http://dx.doi.org/10.3390/ma9040293

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